Semiconductor memory device

ABSTRACT

According to one embodiment, a semiconductor memory device includes first and second conductor layers, a first pillar, a first contact, and a source line drive circuit. The first pillar is passing through the second conductor layers. The first pillar includes a first semiconductor layer and a second insulator layer. The first semiconductor layer includes a side surface partially in contact with the first conductor layer. The first contact is passing through the second conductor layers. The first contact includes a third conductor layer and a third insulator layer. The third conductor layer includes a side surface partially in contact with the first conductor layer. The source line drive circuit is electrically coupled to the first conductor layer via the first contact.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-051563, filed Mar. 19, 2019, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

A NAND-type flash memory capable of storing data in a non-volatilemanner is known.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a configuration example of asemiconductor memory device according to an embodiment;

FIG. 2 is a circuit diagram showing an example of a circuitconfiguration of a memory cell array of the semiconductor memory deviceaccording to the embodiment;

FIG. 3 is a plane view showing an example of a planar layout of thememory cell array of the semiconductor memory device according to theembodiment;

FIG. 4 is a plane view showing an example of a detailed planar layout ofthe memory cell array in a cell area of the semiconductor memory deviceaccording to the embodiment;

FIG. 5 is a cross-sectional view, taken along line V-V of FIG. 4,showing an example of a cross-section structure of the memory cell arrayin the cell area of the semiconductor memory device according to theembodiment;

FIG. 6 is a cross-sectional view, taken along line VI-VI of FIG. 5,showing an example of a cross-section structure of a memory pillar inthe cell area of the semiconductor memory device according to theembodiment;

FIG. 7 is a plan view showing an example of a detailed planar layout inthe cell area and a contact area of the semiconductor memory deviceaccording to the embodiment;

FIG. 8 is a cross-sectional view, taken along line VIII-VIII of FIG. 7,showing an example of the cross-section structure in the cell area andthe contact area of the semiconductor memory device according to theembodiment;

FIG. 9 is a cross-sectional view, taken along line IX-IX of FIG. 8,showing an example of a cross-section structure of a support pillar inthe contact area of the semiconductor memory device according to theembodiment;

FIG. 10 is a cross-sectional view, taken along line X-X of FIG. 8,showing an example of a cross-section structure of a contact in thecontact area of the semiconductor memory device according to theembodiment;

FIG. 11 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 12 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 13 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 14 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 15 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 16 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 17 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 18 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 19 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 20 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 21 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 22 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 23 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 24 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 25 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 26 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 27 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 28 is a cross-sectional view of the memory cell array showing anexample of the process for manufacturing the semiconductor memory deviceaccording to the embodiment;

FIG. 29 is a cross-sectional view showing an example of across-sectional structure in a cell area and a contact area of asemiconductor memory device according to a first modification of theembodiment; and

FIG. 30 is a cross-sectional view showing an example of across-sectional structure in a cell area and a contact area of asemiconductor memory device according to a second modification of theembodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor memory deviceincludes a first conductor layer, a plurality of second conductorlayers, a first pillar, a first contact, and a source line drivecircuit. The first conductor layer is provided via a first insulatorlayer above a substrate. The second conductor layers are stacked abovethe first conductor layer and apart from each other in a firstdirection. The first pillar is passing through the second conductorlayers along the first direction. The first pillar includes a firstsemiconductor layer and a second insulator layer. The firstsemiconductor layer includes a side surface partially in contact withthe first conductor layer. The second insulator layer is providedbetween the first semiconductor layer and the second conductor layers.An intersections with the second conductor layers function as memorycell transistors. The first contact is passing through the secondconductor layers along the first direction. The first contact includes athird conductor layer and a third insulator layer. The third conductorlayer includes a side surface partially in contact with the firstconductor layer. The third insulator layer is provided between the thirdconductor layer and the second conductor layers. The source line drivecircuit is electrically coupled to the first conductor layer via thefirst contact.

Hereinafter, embodiments will be described with reference to theaccompanying drawings. Each of the embodiments is an example of a deviceand a method to embody a technical idea of the invention. The drawingsare schematic or conceptual, and the dimensions and ratios, etc. in thedrawings are not always the same as the actual ones. Furthermore, thetechnical concept of the invention is not limited by the form,structure, arrangement or the like of the structural components.

In the description that follows, components having substantially thesame functions and configurations will be denoted by the same referencesymbols. The numbers after the letters constituting the referencesymbols are used to discriminate between components that are denoted bythe reference symbols sharing letters in common and that have similarconfigurations. If there is no need to discriminate between componentsthat are denoted by the reference symbols sharing letters in common,such components are denoted by reference symbols that include theletters only.

Embodiment

Hereinafter, a semiconductor memory device 1 according to an embodimentwill be described.

[1] Configuration of Semiconductor Memory Device 1

[1-1] Overall Configuration of Semiconductor Memory Device 1

FIG. 1 shows a configuration example of the semiconductor memory device1 according to the embodiment. The semiconductor memory device 1 is aNAND-type flash memory which can store data in a non-volatile manner,and is controlled by an external memory controller 2. Communicationsbetween the semiconductor memory device 1 and the memory controller 2support the NAND interface standard, for example.

As shown in FIG. 1, the semiconductor memory device 1 includes, forexample, a memory cell array 10, a command register 11, an addressregister 12, a sequencer 13, a driver module 14, a row decoder module15, and a sense amplifier module 16.

The memory cell array 10 includes a plurality of blocks BLK0 to BLKn (nis an integer greater than or equal to 1). A block BLK is a group ofmemory cells capable of storing data in a nonvolatile manner, and is,for example, a unit of erasing data. The memory cell array 10 isprovided with a plurality of bit lines and word lines. Each memory cellis, for example, associated with one bit line and one word line. Thememory cell array 10 will be described in detail later.

The command register 11 retains a command CMD received by thesemiconductor memory device 1 from the memory controller 2. The commandCMD includes instructions to cause the sequencer 13 to execute, forexample, a read operation, a write operation, an erase operation, etc.

The address register 12 retains address information ADD received by thesemiconductor memory device 1 from the memory controller 2. The addressinformation ADD includes, for example, a block address BAd, a pageaddress PAd, and a column address CAd. For example, the block addressBAd, the page address PAd, and the column address CAd are used to selecta block BLK, a word line, and a bit line, respectively.

The sequencer 13 controls the operation of the entire semiconductormemory device 1. For example, the sequencer 13 controls the drivermodule 14, the row decoder module 15, the sense amplifier module 16,etc., based on the command CMD held in the command register 11, andexecutes a read operation, a write operation, an erase operation, etc.

The driver module 14 generates voltages used for a read operation, awrite operation, an erase operation, etc. The driver module 14 appliesthe generated voltage to a signal line corresponding to the selectedword line based on, for example, the page address PAd held in theaddress register 12. Furthermore, the driver module 14 may apply thevoltage to the source line SL. Namely, the driver module 14 is also acircuit that drives the source line SL.

The row decoder module 15 selects one block BLK in the correspondingmemory cell array 10 based on a block address BAd held in the addressregister 12. The row decoder module 15 transfers, for example, thevoltage applied to the signal line corresponding to the selected wordline, to the selected word line in the selected block BLK.

In a write operation, the sense amplifier module 16 applies a desiredvoltage to each bit line in accordance with write data DAT received fromthe memory controller 2. Namely, the sense amplifier module 16 is also acircuit that drives the bit line BL. In a read operation, the senseamplifier module 16 determines the data stored in a memory cell based onthe voltage of the bit line, and transfers the determination result asread data DAT to the memory controller 2.

The above mentioned semiconductor memory device 1 and memory controller2 may be combined into a single semiconductor memory device. Such asemiconductor device may be a memory card, such as an SD™ card, and asolid state drive (SSD), for example.

[1-2] Circuit Configuration of Memory Cell Array 10

FIG. 2 shows an example of the circuit configuration of the memory cellarray 10 included in the semiconductor memory device 1 according to theembodiment, focusing on one block BLK among a plurality of blocks BLKincluded in the memory cell array 10. As shown in FIG. 2, the block BLKincludes, for example, four string units SU0 to SU3.

Each string unit SU includes a plurality of NAND strings NS that arerespectively associated with bit lines BL0 to BLm (m is an integergreater than or equal to 1). Each NAND string NS includes, for example,memory cell transistors MT0 to MT15, and select transistors ST1 and ST2.Each memory cell transistor MT includes a control gate and a chargestorage layer, and stores data in a non-volatile manner. Each of theselect transistors ST1 and ST2 is used to select a string unit SU at thetime of performing various operations.

In each NAND string NS, the memory cell transistors MT0 to MT15 arecoupled in series. The select transistor ST1 includes a drain coupled tothe associated bit line BL, and a source coupled to one end of each ofthe memory cell transistors MT0 to MT15 coupled in series. The selecttransistor ST2 includes a drain coupled to the other end of each of thememory cell transistors MT0 to MT15 coupled in series. The selecttransistor ST2 includes a source coupled to the source line SL.

In the same block BLK, control gates of the memory cell transistors MT0to MT15 are coupled in common to respective word lines WL0 to WL15. Inthe string units SU0 to SU3, the gates of the select transistors ST1 arecoupled in common to respective select gate lines SGD0 to SGD3. Thegates of the select transistors ST2 are coupled in common to select gateline SGS.

In the above-described circuit configuration of the memory cell array10, the word lines WL0 to WL7 intersect with a portion formed in amemory hole LMH described later, while the word lines WL8 to WL15intersect with a portion formed in a memory hole UMH described later.The bit line BL is shared by the NAND string NS to which the same columnaddress is assigned in each string unit SU. The source line SL is sharedby a plurality of blocks BLK, for example.

A group of memory cell transistors MT coupled to a common word line WLin a string unit SU is referred to as, for example, a cell unit CU. Forexample, the storage capacity of the cell unit CU including the memorycell transistors MT each holding 1-bit data is defined as “1-page data”.The cell unit CU may have a storage capacity of data of two or morepages in accordance with the number of bits of data stored in the memorycell transistor MT.

The circuit configuration of the memory cell array 10 included in thesemiconductor memory device 1 according to the embodiment is not limitedto the above described configuration. For example, the number of memorycell transistors MT and select transistors ST1 and ST2 included in eachNAND string NS may be determined as appropriate. The number of stringunits SU included in each block BLK may be determined as appropriate.

[1-3] Configuration of Memory Cell Array 10

An example of the configuration of the memory cell array 10 according tothe embodiment will be described.

In the drawings referred to in the following description, the Xdirection corresponds to the extending direction of word lines WL, the Ydirection corresponds to the extending direction of bit lines BL, andthe Z direction corresponds to the direction vertical to the surface ofthe semiconductor substrate 20 on which the semiconductor memory device1 is formed. In the plan view, shading lines are provided as appropriatefor viewability. The shading lines provided in the plan view are notnecessarily related to materials or characteristics of elements with theshading lines. In the cross-sectional view, elements such as aninsulation film (interlayer insulation film), an interconnect, acontact, etc. are omitted as appropriate for viewability.

FIG. 3 is an example of the planar layout of the memory cell array 10included in the semiconductor memory device 1 according to theembodiment, focusing on a region including a structure corresponding toone block BLK (i.e., string units SU0 to SU3). As shown in FIG. 3, thememory cell array 10 includes a plurality of slits SLT.

The slits SLT each extend in the X direction and are arranged in the Ydirection. The slits SLT include insulators to, for example, divide theinterconnect layers corresponding to the word lines WL, the interconnectlayer corresponding to the select gate line SGD, and the interconnectlayer corresponding to the select gate line SGS. In this example, aregion divided by the slits SLT corresponds to one string unit SU. Thatis, the string units SU0 to SU3 each extending in the X direction arearranged in the Y direction. In the memory cell array 10, the layoutshown in FIG. 3, for example, is repeatedly arranged in the Y direction.

In the planar layout of the memory cell array 10 described above, a cellarea CA and a contact area C4 tap are arranged to extend in the Ydirection. For example, the cell area CA and the contact area C4 tap arealternately arranged in the X direction. The cell area CA is an areawhere the NAND string NS is formed. The contact area C4 tap is an areawhere a contact is formed for electrically coupling the source line SLcoupled to the NAND string NS and the circuit formed between thesemiconductor substrate and the memory cell array 10. The cell area CAand the contact area C4 tap of the memory cell array 10 will bedescribed below in this order.

(Configuration in Cell Area CA)

FIG. 4 shows an example of a detailed planar layout of the memory cellarray 10 in the cell area CA of the semiconductor memory device 1according to the embodiment. As shown in FIG. 4, in the cell area CA,the memory cell array 10 includes a plurality of memory pillars MP and aplurality of bit lines BL.

The memory pillars MP are, for example, staggered in four lines in aregion between neighboring slits SLT. The number or the arrangement ofthe memory pillars MP between the neighboring slits SLT is not limitedto this, and may be changed as appropriate. Each of the memory pillarsMP functions as one NAND string NS, for example.

The bit lines BL each extend in the Y direction, and are arranged in theX direction. Each bit line BL is arranged to overlap with at least onememory pillar MP in each string unit SU. In this example, each memorypillar MP overlaps with two bit lines BL. A contact MPC is providedbetween the memory pillar MP and one bit line BL of the plurality of bitlines BL overlapping with the memory pillar MP. Each memory pillar MP iselectrically coupled to the corresponding bit line BL via the contactMPC.

FIG. 5 is a cross-sectional view taken along line V-V of FIG. 4, andshows an example of a cross-section structure in the cell area CA of thememory cell array 10 included in the semiconductor memory device 1according to the embodiment. As shown in FIG. 5, the memory cell array10 further includes conductor layers 21 to 26. The conductor layers 21to 26 are provided above the semiconductor substrate 20.

Specifically, the conductor layer 21 is provided via an insulator layerabove the semiconductor substrate 20. Although illustration is omitted,the insulator layer between the semiconductor substrate 20 and theconductor layer 21 is provided with a circuit such as a sense amplifiermodule 16. The conductor layer 21 is formed in a plate-like shapeexpanding along the XY plane, for example, and is used as the sourceline SL. The conductor layer 21 contains, for example, silicon (Si).

The conductor layer 22 is provided via the insulator layer above theconductor layer 21. The conductor layer 22 is formed in a plate-likeshape expanding along the XY plane, for example, and is used as theselect gate line SGS. The conductor layer 22 contains, for example,silicon (Si).

The insulator layer and the conductor layer 23 are alternately arrangedabove the conductor layer 22. The conductor layer 23 is formed in aplate-like shape expanding along the XY plane, for example. For example,the stacked conductor layers 23 are respectively used as the word linesWL0 to WL7 in the order from the semiconductor substrate 20 side. Theconductor layer 23 contains, for example, tungsten (W).

The insulator layer and the conductor layer 24 are alternately arrangedabove the uppermost conductor layer 23. The conductor layer 24 isformed, for example, in a plate-like shape expanding along the XY plane.For example, the stacked conductor layers 24 are respectively used asword lines WL8 to WL15 in the order from the semiconductor substrate 20side. The conductor layer 24 contains, for example, tungsten.

The insulator layer between the uppermost conductor layer 23 and thelowermost conductor layer 24 is thicker than that between the adjacentconductor layers 23, and thicker than that between the adjacentconductor layers 24. In other words, the space in the Z directionbetween the uppermost conductor layer 23 and the lowermost conductorlayer 24 is larger than that in the Z direction between the adjacentconductor layers 23, and larger than that in the Z direction between theadjacent conductor layers 24.

The conductor layer 25 is provided via the insulator layer above theuppermost conductor layer 24. The conductor layer 25 is formed in aplate-like shape expanding along the XY plane, for example, and is usedas the select gate line SGD. The conductor layer 25 contains, forexample, tungsten.

The conductor layer 26 is provided via the insulator layer above theconductor layer 25. The conductor layer 26 is formed in a shape of aline extending along the Y direction, for example, and is used as thebit line BL. Namely, a plurality of conductor layers 26 are arrangedalong the X direction in a region not shown. The conductor layer 26contains, for example, copper (Cu).

The memory pillar MP is provided to extend along the Z direction, andpasses through the conductor layers 22 to 25. Each memory pillar MPincludes a first portion formed in a lower memory hole LMH, and a secondportion formed in an upper memory hole UMH.

Specifically, the first portion corresponding to the memory hole LMHpasses through the conductor layers 22 and 23. The first portioncorresponding to the memory hole LMH includes a bottom that is locatedinside the layer in which the conductor layer 21 is provided. In otherwords, the bottom of the first portion corresponding to the memory holeLMH is terminated without passing through the conductor layer 21. Thesecond portion corresponding to the memory hole UMH is provided abovethe first portion corresponding to the memory hole LMH, and passesthrough the conductor layers 24 and 25.

The memory pillar MP includes, for example, a core member 30, asemiconductor layer 31, a tunnel insulation film 32, an insulation film33, a block insulation film 34, and a semiconductor portion 35. The coremember 30, the semiconductor layer 31, the tunnel insulation film 32,the insulation film 33, and the block insulation film 34 arecontinuously provided between the first portion and the second portionof the memory pillar MP.

Specifically, the core member 30 is provided to extend along the Zdirection. For example, the upper end of the core member 30 is includedin the layer higher than the layer in which the conductor layer 25 isprovided, while the lower end of the core member 30 is included in thelayer in which the conductor layer 21 is provided. The core member 30includes an insulator of silicon oxide (SiO₂), etc.

The semiconductor layer 31 covers the side and bottom surfaces of thecore member 30. The semiconductor layer 31 includes a side contactportion SC1. The side contact portion SC1 is included in the layer inwhich the conductor layer 21 is provided. At the side contact portionSC1, the semiconductor layer 31 is in contact with the conductor layer21, and electrically coupled to the conductor layer 21. Thesemiconductor layer 31 contains, for example, silicon.

The tunnel insulation film 32 covers the side and bottom surfaces of thesemiconductor layer 31 except for the side contact portion SC1. Theinsulation film 33 covers the side and bottom surfaces of the tunnelinsulation film 32 except for the side contact portion SC1. The blockinsulation film 34 covers the side and bottom surfaces of the insulationfilm 33 except for the side contact portion SC1. The tunnel insulationfilm 32 and the block insulation film 34 each contain, for example,silicon oxide. The insulation film 33 contains, for example, siliconnitride (SiN).

The semiconductor portion 35 is included in the layer higher than theconductor layer 25, and the side surface is in contact with the innerwall of the semiconductor layer 31 while the bottom surface is incontact with the core member 30, for example. The semiconductor portion35 and the semiconductor layer 31 are electrically coupled. Thesemiconductor portion 35 is, for example, formed of a material similarto that of the semiconductor layer 31.

A column-like contact MPC is provided on the top surfaces of thesemiconductor layer 31 and the semiconductor portion 35 in the memorypillar MP. In the region illustrated, the contact MPC of one memorypillar MP out of two memory pillars MP is shown. To the memory pillar MPto which the contact MPC is not coupled in this region, a contact MPC iscoupled in a region not shown. One conductor layer 26, i.e., one bitline BL, is in contact with the top surface of the contact MPC. Onecontact MPC is coupled to one bit line BL in the space partitioned bythe slits SLT.

The slit SLT is formed in a plate-like shape expanding along the XZplane, for example, and divides the conductor layers 22 to 25. The upperend of the slit SLT is included in the layer between the conductorlayers 25 and 26. The lower end of the slit SLT is included in the layerin which the conductor layer 21 is provided, for example. The slit SLTincludes an insulator of silicon oxide, for example.

FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 5, andshows an example of the cross-section structure of the memory pillar MPin the semiconductor memory device according to the embodiment. Morespecifically, FIG. 6 shows the cross-section structure of the memorypillar MP and its peripheral portion in the layer parallel to thesurface of the semiconductor substrate 20 and including the conductorlayer 23.

As shown in FIG. 6, in the layer including the conductor layer 23, thecore member 30 is provided at the center of the memory pillar MP, forexample. The semiconductor layer 31 surrounds the side surface of thecore member 30. The tunnel insulation film 32 surrounds the side surfaceof the semiconductor layer 31. The insulation film 33 surrounds the sidesurface of the tunnel insulation film 32. The block insulation film 34surrounds the side surface of the insulation film 33. The conductorlayer 23 surrounds the side surface of the block insulation film 34.

In the above-described structure of the memory pillar MP, the portionwhere the memory pillar MP and the conductor layer 22 intersect witheach other functions as the select transistor ST2. The portion where thememory pillar MP and the conductor layer 23 intersect with each otherand the portion where the memory pillar MP and the conductor layer 24intersect with each other function as the memory cell transistors MT.The portion where the memory pillar MP and the conductor layer 25intersect with each other functions as the select transistor ST1.

Namely, the semiconductor layer 31 is used as a channel of each of thememory cell transistors MT and the select transistors ST1 and ST2. Theinsulation film 33 is used as a charge storage layer in the memory celltransistor MT. Therefore, each of the memory pillars MP may function asone NAND string NS.

(Configuration in Contact Area C4 tap)

FIG. 7 shows an example of the detailed planar layout of the memory cellarray 10 in the contact area C4 tap of the semiconductor memory device 1according to the embodiment. The region shown in FIG. 7 includes an endregion of the cell area CA. As shown in FIG. 7, the memory cell array 10includes, in the contact area C4 tap, a plurality of support pillars HR,contacts C4, and interconnects IC.

In the contact area C4 tap, regions CR and PR are provided to eachextend in the Y direction. The region CR is provided to be adjacent tothe cell area CA. The region PR is provided to be adjacent to the regionCR and away from the cell area CA. The region CR includes a plurality ofsupport pillars HR. The region PR includes a plurality of contacts C4.The support pillars HR may be included in the region PR.

Although illustration is omitted, the source line SL in the region CRand the source line SL in the cell area CA are continuously provided,and electrically coupled. In the region PR, the source line SL may ormay not be divided. The source line SL in the region PR may be providedto have a different layer structure from the cell area CA and the regionCR. The following description is based on the case where the source lineSL is divided in the region PR.

Each of the support pillars HR includes a lower end that is electricallycoupled to the source line SL. For example, the support pillars HR arearranged between the neighboring slits SLT in the region CR. Each of thecontacts C4 includes a lower end that is electrically coupled to theinterconnect below the memory cell array 10. For example, the contact C4is arranged between the neighboring slits SLT in the region PR. Theplurality of interconnects IC are arranged to overlap with at least twosupport pillars HR and at least one contact C4.

The plurality of support pillars HR include those overlapping with theinterconnect IC and those not overlapping with the interconnect IC. Acontact HRC is provided, as an upper contact, between the support pillarHR and the interconnect IC on the support pillar HR overlapping with theinterconnect IC. An upper contact is not provided on the support pillarHR that does not overlap with the interconnect IC. The support pillar HRoverlapping with the interconnect IC is electrically coupled to thecorresponding interconnect IC via the contact HRC. A contact C4C isprovided between the contact C4 and the interconnect IC overlapping withthe contact C4. The contact C4 is electrically coupled to thecorresponding interconnect IC via the contact C4C.

In the example of FIG. 7, in each string unit SU region, theinterconnect IC is provided to overlap with two support pillars HR andone contact C4. The contacts HRC are provided to correspond to the twosupport pillars HR, and the contact C4C is provided to correspond to thecontact C4. That is, two support pillars HR coupled in parallel to thesource line SL and one contact C4 are electrically coupled via theinterconnect IC.

The planar layout of the memory cell array 10 in the contact area C4 tapcan be modified in various manners, and is not limited to the example ofFIG. 7. For example, the interconnect IC may be provided to overlap withthree or more support pillars HR. The plurality of support pillars HRoverlapping with the interconnect IC may include those provided with thecontacts HRC and coupled to the interconnect IC, and those not providedwith the contacts HRC and not coupled to the interconnect IC. Thesupport pillar HR, the contact C4, and the interconnect IC do not haveto be provided independently for each string unit SU.

FIG. 8 is a cross-sectional view taken along line VIII-VIII of FIG. 7,and shows an example of the cross-section structure in the contact areaC4 tap of the memory cell array 10 included in the semiconductor memorydevice 1 according to the embodiment. The region shown in FIG. 8includes one memory pillar MP in the cell area CA. As shown in FIG. 8,the memory cell array 10 further includes a conductor layer D2,insulator layers 27, and a conductor layer 28, in the contact area C4tap.

The conductor layer D2 is, for example, an interconnect coupled to thedriver module 14, and is provided between the semiconductor substrate 20and the conductor layer 21. The insulator layers 27 divide the conductorlayer 21 (source line SL), for example. The region where the insulatorlayers 27 is provided corresponds to the region PR. The insulator layers27 do not necessarily have to be provided, and a conductor layer havinga different structure from that of the conductor layer 21 may beprovided in the region where the insulator layer 27 is provided. In thiscase, the conductor layer 21 (source line SL) in the neighboring cellarea CA is electrically coupled via the conductor layer of a differentstructure. The conductor layer 28 is, for example, provided above theconductor layer 26, and used as an interconnect IC.

The support pillar HR is provided to extend along the Z direction, andpasses through the conductor layers 22 to 25. The layer including theupper end of the support pillar HR is included in the layer higher thanthe layer including the upper end of the memory pillar MP. Each supportpillar HR includes a first portion formed in a lower hole LHR, and asecond portion formed in an upper hole UHR.

Specifically, the first portion corresponding to the hole LHR passesthrough the conductor layers 22 and 23. The first portion correspondingto the hole LHR includes a bottom that is located inside the layer inwhich the conductor layer 21 is provided. In other words, the bottom ofthe first portion corresponding to the hole LHR is terminated withoutpassing through the conductor layer 21. The second portion correspondingto the hole UHR is provided above the first portion corresponding to thehole LHR, and passes through the conductor layers 24 and 25. The upperend of the first portion of the support pillar HR, i.e., the upper endof the first portion formed in the hole LHR, has a height nearly equalto that of the upper end of the first portion of the memory pillar MP,i.e., the upper end of the first portion formed in the memory hole LMH.

The support pillar HR includes, for example, a conductor layer 40 and aninsulation film 41. For example, the conductor layer 40 and theinsulation film 41 are continuously provided between the first andsecond portions of the support pillar HR.

Specifically, the conductor layer 40 is provided to extend along the Zdirection. For example, the upper end of the conductor layer 40 isincluded in the layer higher than the upper end of the semiconductorlayer 31 in the memory pillar MP, while the lower end of the conductorlayer 40 is included in the layer in which the conductor layer 21 isprovided. The conductor layer 40 is in contact with the conductor layer21 at the side contact portion SC2 included in the layer in which theconductor layer 21 is provided, and is electrically coupled to theconductor layer 21. The conductor layer 40 may be a metal or asemiconductor. For example, the conductor layer 40 may contain tungstenor silicon.

The insulation film 41 covers the side and bottom surfaces of theconductor layer 40 except for the side contact portion SC2 of theconductor layer 40. The insulation film 41 contains, for example,silicon oxide.

A column-like contact HRC is provided on the support pillar HR coupledto the interconnect IC. Specifically, the contact HRC is provided on theconductor layer 40. In the region illustrated, the contact HRC isprovided on the top surface of each of two support pillars HR, and oneconductor layer 28 is in contact with the tops of the contacts HRC.

The contact C4 is provided to extend along the Z direction, and passesthrough the conductor layers 22 to 25 and the insulator layer 27. Theupper end of the contact C4 is included in the layer higher than theupper end of the support pillar HR. The bottom of the contact C4 is incontact with the conductor layer D2. The contact C4 has an outerdiameter larger than that of the support pillar HR.

The contact C4 includes, for example, a conductor layer 50 and aninsulation film 51.

Specifically, the conductor layer 50 is provided to extend in the Zdirection. For example, the upper end of the conductor layer 50 isincluded in the layer higher than the upper end of the conductor layer40 in the support pillar HR, while the lower end of the conductor layer50 is in contact with the conductor layer D2. The conductor layer 50contains, for example, tungsten.

The insulation film 51 covers the side surface of the conductor layer50. The insulation film 51 contains, for example, silicon oxide.

A column-like contact C4C is provided on the contact C4. The top surfaceof the contact C4C is in contact with the conductor layer 28.

FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8, andshows an example of the cross-section structure of the support pillar HRin the semiconductor memory device according to the embodiment. Morespecifically, FIG. 9 shows the cross-section structure of the supportpillar HR and its peripheral portion in the layer parallel to thesurface of the semiconductor substrate 20 and including the conductorlayer 23.

As shown in FIG. 9, in the layer including the conductor layer 23, theconductor layer 40 is provided at the center of the support pillar HR,for example. The insulation film 41 surrounds the side surface of theconductor layer 40. The conductor layer 23 surrounds the side surface ofthe insulation film 41.

FIG. 10 is a cross-sectional view taken along line X-X of FIG. 8, andshows an example of the cross-section structure of the contact C4 in thesemiconductor memory device according to the embodiment. Morespecifically, FIG. 10 shows the cross-section structure of the contactC4 and its peripheral portion in the layer parallel to the surface ofthe semiconductor substrate 20 and including the conductor layer 23.

As shown in FIG. 10, in the layer including the conductor layer 23, theconductor layer 50 is provided at the center of the contact C4, forexample. The insulation film 51 surrounds the side surface of theconductor layer 50. The conductor layer 23 surrounds the side surface ofthe insulation film 51.

In the above-described structure of the support pillar HR and thecontact C4, the conductor layers 40 and 50 function as a current pathbetween the source line SL and the conductor layer D2. Namely, theconductor layer 21 used as the source line SL is electrically coupled tothe conductor layer D2 via the conductor layer 40, the contact HRC, theinterconnect IC, the contact C4C, and the conductor layer 50.

The configuration of the memory cell array 10 has been described as anexample above, and the memory cell array 10 may have otherconfigurations. For example, the number of the conductor layers 23 orthe conductor layers 24 is determined based on the number of word linesWL. A plurality of conductor layers 22 provided in a plurality of layersmay be allocated to the select gate line SGS. If the select gate lineSGS is provided in a plurality of layers, a conductor layer differentfrom the conductor layer 22 may be used. A plurality of conductor layers25 provided in a plurality of layers may be allocated to the select gateline SGD.

The memory pillar MP and the conductor layer 26 may be electricallycoupled via two or more contacts, and may be electrically coupled viaother interconnect. Similarly, the support pillar HR and theinterconnect IC, and the contact C4 and the interconnect IC, may beelectrically coupled via two or more contacts, or other interconnect.The inside of the slit SLT may be made of various types of insulators.For example, silicon nitride (SiN) may be formed as a side wall of theslit SLT before silicon oxide is filled in the slit SLT.

[2] Manufacturing Method of Semiconductor Memory Device 1

Next, a description will be given of an example of a series ofmanufacturing processes relating to formation of the stackedinterconnect structure inside the memory cell array 10 in thesemiconductor memory device 1 according to the embodiment. FIGS. 11 to28 each show an example of the cross-section structure including thestructure corresponding to the memory cell array 10 in the process ofmanufacturing the semiconductor memory device 1 according to theembodiment. The area shown in the cross-sectional view of eachmanufacturing process referred to in the following description includesa region where the memory pillar MP, the support pillar HR, the contactC4, and the slit SLT are formed.

First, as shown in FIG. 11, a source line portion is formed. The sourceline portion refers to a stacked structure of the interconnect layercorresponding to the conductor layer 21 used as the source line SL. Inthis process, first, an insulator layer 60 including the conductor layerD2, a conductor layer 61, a sacrifice member 62, and a conductor layer63 are formed in this order on the semiconductor substrate 20. Then, apart of each of the conductor layer 61, the sacrifice member 62 and theconductor layer 63 is removed, and the insulator layer 27 is formed inthe space obtained by removal.

A part of the conductor layer D2 and the insulator layer 27 overlap withthe region PR described with reference to FIG. 7. Although illustrationis omitted, circuits corresponding to the driver module 14, the senseamplifier module 16, etc. are formed between the semiconductor substrate20 and the conductor layer 61. The conductor layers 61 and 63 eachcontain, for example, polysilicon with phosphorus doped therein. For thesacrifice member 62, a material capable of increasing the etchingselection ratio to each of the conductor layers 61 and 63 is selected.The insulator layer 27 contains, for example, silicon oxide (SiO₂).

Next, as shown in FIG. 12, an insulator layer 64 is formed on theconductor layer 63 and the insulator layer 27. A conductor layer 22 isformed on the insulator layer 64. An insulator layer 65 and a sacrificemember 66 are alternatively arranged on the conductor layer 22. Aninsulator layer 67 is formed on the uppermost sacrifice member 66. Theconductor layer 22 corresponds to the select gate line SGS. Theinsulator layers 64, 65, and 67 each contain silicon oxide, for example.The sacrifice member 66 corresponds to the word line WL intersectingwith the first portion of the memory pillar MP. The sacrifice member 66contains, for example, silicon nitride (SiN).

Next, as shown in FIG. 13, the memory hole LMH and the hole LHR areformed. Specifically, first, a mask is formed by photolithography, etc.in which areas corresponding to the memory hole LMH and the hole LHR areopened. Then, by anisotropic etching using the formed mask, the memoryhole LMH and the hole LHR are formed.

The memory hole LMH and the hole LHR formed in this process pass throughthe insulator layers 64, 65 and 67, the sacrifice members 62 and 66, andthe conductor layers 22 and 63, and the memory hole LMH and the hole LHReach include the bottom that is terminated inside the conductor layer61. The anisotropic etching in this process is, for example, reactiveion etching (RIE).

Next, as shown in FIG. 14, the sacrifice member 68 is formed in each ofthe memory hole LMH and the hole LHR. Specifically, first, the sacrificemembers 68 are formed to fill in the memory hole LMH and the hole LHR.Then, the sacrifice members 68 formed outside the memory hole LMH andthe hole LHR are removed by, for example, chemical mechanical polishing(CMP). The sacrifice member 68 is, for example, amorphous silicon.

Next, as shown in FIG. 15, the insulator layer 70 is formed on theinsulator layer 67 and the sacrifice members 68. The sacrifice member 71and the insulator layer 72 are alternatively arranged on the insulatorlayer 70. The insulator layer 73 is formed on the uppermost sacrificemember 71. The insulator layers 70, 72, and 73 each contain, forexample, silicon oxide. The sacrifice members 71 correspond to the wordlines WL and the select gate line SGD intersecting with the secondportion of the memory pillar MP. The sacrifice member 71 contains, forexample, silicon nitride.

Next, as shown in FIG. 16, the memory hole UMH is formed. Specifically,first, a mask is formed by photolithography, etc., in which an areacorresponding to the memory hole UMH, i.e., an area overlapping with thememory hole LMH, is opened. Then, by anisotropic etching using theformed mask, the memory hole UMH is formed.

The memory hole UMH formed in this process is provided on the sacrificemember 68 filled in the memory hole LMH. The memory hole UMH passesthrough the insulator layers 70, 72 and 73, and the sacrifice members71, and at the bottom of the memory hole UMH, a part of the sacrificemember 68 in the memory hole LMH is exposed. The anisotropic etching inthis process is, for example, RIE.

Next, as shown in FIG. 17, the memory pillars MP is formed.Specifically, first, the sacrifice member 68 formed in the memory holeLMH is removed by wet etching, etc. through the memory hole UMH. Next,the block insulation film 34, the insulation film 33, the tunnelinsulation film 32, the semiconductor layer 31, and the core member 30are formed in this order in the memory holes LMH and UMH. Then, theblock insulation film 34, the insulation film 33, the tunnel insulationfilm 32, the semiconductor layer 31, and the core member 30 formed abovethe top surface of the insulator layer 73 are removed by, for example,CMP. Then, the upper end of the core member 30 is etched back up to theinside of the layer in which the insulator layer 73 is formed, therebyforming a semiconductor portion 35 in the area where the core member 30is removed. As a result, the structure corresponding to the memorypillar MP is formed in each of the memory holes LMH and UMH.

Next, as shown in FIG. 18, the hole UHR is formed. Specifically, theinsulator layer 74 is formed on the top surfaces of the insulator layer73 and the memory pillar MP. Then, a mask is formed by photolithography,etc., in which an area corresponding to the hole UHR, i.e., an areaoverlapping with the hole LHR, is opened. Then, by anisotropic etchingusing the formed mask, the hole UHR is formed.

The hole UHR formed in this process is provided on the sacrifice member68 filled in the hole LHR. The hole UHR passes through the insulatorlayers 70, 72, 73 and 74, and the sacrifice members 71, and at thebottom of the hole UHR, a part of the sacrifice member 68 in the holeLHR is exposed. The anisotropic etching in this process is, for example,RIE. The insulator layer 74 contains, for example, silicon oxide.

Next, as shown in FIG. 19, the support pillar HR is formed.Specifically, first, the sacrifice member 68 formed in the hole LHR isremoved by wet etching, etc. Thereafter, the insulation film 41 and theconductor layer 40 are formed in the holes LHR and UHR. Then, theinsulation film 41 and the conductor layer 40 formed above the topsurface of the insulator layer 74 are removed by, for example, CMP.

Next, as shown in FIG. 20, the contact hole C4H is formed. Specifically,first, the insulator layer 75 is formed on the top surfaces of theinsulator layer 74 and the support pillar HR. Next, a mask is formed byphotolithography, etc. in which an area corresponding to the contacthole C4H is opened. Then, by anisotropic etching using the formed mask,the contact hole C4H is formed.

The contact hole C4H formed in this process passes through the insulatorlayers 27, 64, 65, 67, 70, 72, 73, 74 and 75, the sacrifice members 66and 71, and the conductor layer 22, and at the bottom of the contacthole C4H, a part of the conductor layer D2 in the insulator layer 60 isexposed. The anisotropic etching in this process is, for example, RIE.The insulator layer 75 contains, for example, silicon oxide.

Next, as shown in FIG. 21, the contact C4 is formed. Specifically,first, the insulation film 51 is formed in the contact hole C4H. Theinsulation film 51 formed at the bottom of the contact hole C4H isremoved so as to expose the conductor layer D2. Then, the conductorlayer 50 is filled in the contact hole C4H, and the insulation film 51and the conductor layer 50 formed above the top surface of the insulatorlayer 75 are removed by, for example, CMP.

Next, the replacement process for the source line portion is performed.In the replacement process for the source line portion, the insulatorlayer 76 is formed on the top surfaces of the insulator layer 75 and thecontact C4. Next, a mask is formed by photolithography, etc. in which anarea corresponding to the slit SLT is opened. Then, by anisotropicetching using the formed mask, the slit SLT is formed as shown in FIG.22.

The slit SLT formed in this process passes through the insulator layers65, 67, 70, 72, 73, 74, 75 and 76, the sacrifice members 66 and 71, andthe conductor layer 22, and has the bottom that is terminated inside theinsulator layer 64. The anisotropic etching in this process is, forexample, RIE. The insulator layer 76 contains, for example, siliconoxide.

The spacer 77 is formed on the top surface of the insulator layer 76 andthe inner wall of the slit SLT by chemical vapor deposition (CVD), forexample. For the spacer 77, silicon nitride is formed, for example. ByRIE, for example, as shown in FIG. 23, the spacer 77 formed on the topsurface of the insulator layer 76 and the spacer 77 formed at the bottomof the slit SLT are removed. Thereby, a side wall of silicon nitride isformed on the side surface of the slit SLT.

Etching to remove the spacer 77 formed at the bottom of the slit SLT iscontinued after the removal of the spacer 77 formed at the bottom of theslit SLT. As a result, by the etching, the bottom of the slit SLTreaches the layer in which the sacrifice member 62 is formed, forexample. The slit SLT in this process may pass through the sacrificemember 62, or the bottom of the slit SLT may reach the inside layer inwhich the conductor layer 61 is formed. The slit SLT in this process mayreach at least the sacrifice member 62.

By performing etching through the slit SLT, the sacrifice member 62 isselectively removed. As a result, at the lower end of the memory pillarMP, the side surface of the block insulation film 34 is exposed, and atthe lower end of the support pillar HR, the side surface of theinsulation film 41 is exposed. Next, etching is performed through thespace obtained by removing the sacrifice member 62 to thereby remove apart of each of the block insulation film 34, the insulation film 33 andthe tunnel insulation film 32 as well as a part of the insulation film41 exposed in the space. As a result, as shown in FIG. 24, at the lowerend of the memory pillar MP, a part of the side surface of thesemiconductor layer 31 is exposed, and at the lower end of the supportpillar HR, a part of the side surface of the conductor layer 40 isexposed.

Thereafter, the conductor layer 78 is formed in the space obtained byremoval of the sacrifice member 62, a part of each of the blockinsulation film 34, the insulation film 33 and the tunnel insulationfilm 32, and a part of the insulation film 41, and etching back isperformed subsequently. As a result, as shown in FIG. 25, thesemiconductor layer 31 of the memory pillar MP, the conductor layer 40of the support pillar HR, and the source line portion (a group of theconductor layers 61, 78 and 63) are electrically coupled. For theconductor layer 78, polysilicon with phosphorus doped therein is formed.

Next, the replacement process for the stacked interconnect portion isperformed. In the replacement process for the stacked interconnectportion, first, the surfaces of the conductor layers 61, 78 and 63(polysilicon film) exposed in the slit SLT are oxidized to form an oxideprotective film (not shown). Thereafter, the spacer 77 and the sacrificemembers 66 and 71 are removed, as shown in FIG. 26, by wet etching usingthermal phosphoric acid. In the structure in which the sacrifice members66 and 71 are removed, the three-dimensional configuration thereof ismaintained by the memory pillar MP and the support pillar HR, forexample. If the oxide protective film is formed on the surface of thepolysilicon film, the oxide protective film is not formed on the surfaceof the spacer 77. That is, when the oxide protective film is formed inthis process, selective oxidation is performed, for example. Then,conductors corresponding to the conductor layers 23, 24 and 25 areformed by, for example, CVD, in the space obtained by removal of thesacrifice members 66 and 71. For the conductors corresponding to theconductor layers 23, 24 and 25, for example, a metallic film of tungstenor the like may be filled after a block film of aluminum oxide (Al₂O₃)is formed.

Then, the conductors formed in the slit SLT are removed by, for example,wet etching, and the plurality of conductor layers 23, 24 and 25provided in different layers are separated from one another. As aresult, as shown in FIG. 27, for example, the conductor layers 23corresponding respectively to the word lines WL0 to WL7, the conductorlayers 24 corresponding respectively to the word lines WL8 to WL15, andthe conductor layer 25 corresponding to the select gate line SGD areformed.

Thereafter, as shown in FIG. 28, the insulator 79 is formed in the slitSLT. In this process, silicon nitride, etc. may be formed as a side wallof the slit SLT before the insulator 79 is filled in the slit SLT.

In the manufacturing process described above, the NAND string NS, thesource line SL coupled to the NAND string NS, the select gate lines SGSand SGD, the word lines WL, the support pillar HR, and the contact C4are formed. It should be noted that the manufacturing process has beendescribed as an example, and other processes may be inserted betweenprocesses described.

[3] Advantages of Embodiment

The semiconductor memory device 1 according to the embodiment describedabove makes it possible to improve the yield of the semiconductor memorydevice 1. The following is a detailed description of the advantages ofthe semiconductor memory device 1 according to the embodiment.

The semiconductor memory device with three-dimensionally stacked memorycells is provided with the stacked interconnects including, for example,the source line SL, the select gate line SGS, the word lines WL, and theselect gate line SGD, above the semiconductor substrate. The memorypillar MP is provided to pass through the stacked interconnects abovethe source line SL, and is electrically coupled to the source line SLarranged in the lowermost layer. As described, in the semiconductormemory device in which the memory cell array is provided above thesemiconductor substrate, the interconnect for applying the voltage tothe source line SL may be provided below the memory cell array, i.e.,between the semiconductor substrate and the source line SL.

In the process of manufacturing the memory cell array having the stackedinterconnects, the replacement process for the stacked interconnects isperformed, for example. In the replacement process for the stackedinterconnects, first, the sacrifice member and the insulator layer arealternatively arranged. Next, for example, after formation of the memorypillar MP, the support pillar HR and the contact C4 in the stackedstructure, the sacrifice members are removed, and the conductors areformed in the space obtained by removal of the sacrifice members. Thethree-dimensional configuration in the cell area CA when the sacrificemembers are removed is maintained by the plurality of memory pillars MP,while the three-dimensional configuration in the contact area C4 tap ismaintained by the plurality of support pillars HR and the plurality ofcontacts C4.

Moreover, for electrically coupling the source line SL and theinterconnect below the memory cell array, the semiconductor memorydevice including the interconnect below the memory cell array uses thecontact that is coupled to the source line SL and passes through thestacked interconnects above the source line SL, and the contact C4 thatis coupled to the interconnect below the memory cell array and has theupper end higher than the uppermost interconnect (select gate line SGD)in the stacked interconnects including the source line SL. The sourceline SL is electrically coupled to the interconnect below the memorycell array by passing through these two types of contacts and theinterconnect above the memory cell array.

The two types of contacts for coupling the source line SL and theinterconnect below the memory cell array are provided in such a mannerthat one is provided on the source line SL while the other is providedon the interconnect below the memory cell array. The two types ofcontacts are each formed in a hole having a depth corresponding to theheight of the stacked interconnect, and preferably formed by the sameprocess for reducing the manufacturing costs. That is, when the twotypes of contacts are formed by the same process, two types of contactholes having different target bottom positions are formed at the sametime. However, etching to form such two types of contact holes isdifficult, and there may be variations in bottom positions of thecontact holes. There is a concern that a failure may occur resultingfrom the source line SL due to the variations and the yield of thesemiconductor memory device is lowered.

In contrast, the semiconductor memory device 1 according to theembodiment uses the plurality of support pillars HR provided in thecontact area C4 tap as the contacts for electrically coupling the sourceline SL and the interconnect below the memory cell array. Specifically,in the semiconductor memory device 1 according to the embodiment, theplurality of support pillars HR are provided to overlap with the sourceline SL, and each of the support pillars HR includes the conductor layer40 provided to pass through the stacked interconnects. Each of theconductor layers 40 is electrically coupled to the source line SL viathe side surface, in a manner similar to the memory pillar MP, in thelayer in which the source line SL (conductor layer 21) is provided.

In addition, the support pillars HR include one to which the contact HRCis coupled at the top and one to which an upper contact is not coupled.The support pillar HR to which the contact HRC is coupled iselectrically coupled to the contact C4 that passes through the stackedinterconnects and that is coupled to the interconnect below the memorycell array. Namely, in the semiconductor memory device 1 according tothe embodiment, the source line SL (conductor layer 21) is electricallycoupled to the source line drive circuit (e.g., driver module 14) viathe contact C4 and the support pillar HR to which the contact HRC iscoupled.

As a result, the semiconductor memory device 1 according to theembodiment can drive the source line SL via the support pillar HR. Inaddition, the method of manufacturing the semiconductor memory device 1according to the embodiment uses the support pillars HR as the contactsfor the source line SL, and therefore the target position of the bottomof the contact hole C4H can be one type in the process of forming thecontact hole C4H corresponding to the contact C4. Thus, the method ofmanufacturing the semiconductor memory device 1 according to theembodiment can reduce the difficulty in processing the contact hole C4Hand can improve the yield.

The conductor layer 40 included in the support pillar HR is electricallycoupled to the source line SL via the side surface in the layer in whichthe source line SL is provided. This is similar to the coupling betweenthe semiconductor layer 31 included in the memory pillar MP and thesource line SL. That is, the process for coupling the conductor layer 40included in the support pillar HR to the source line SL and the processfor coupling the semiconductor layer 31 included in the memory pillar MPto the source line SL can be performed by the same process. Thus, themethod of manufacturing the semiconductor memory device 1 according tothe embodiment can reduce the manufacturing processes and can suppressthe manufacturing costs.

If the semiconductor memory device 1 has the memory pillar MP in whichtwo or more pillars are connected, i.e., the first portion formed in thelower memory hole LMH and the second portion formed in the upper memoryhole UMH, for example, the support pillar HR is formed in a mannersimilar to the memory pillar MP to have the structure in which two ormore pillars are connected. In this case, the process for the hole LHRpassing through the lower stacked interconnects and corresponding to thesupport pillar HR and the process for the memory hole LMH may becollectively performed. Since the method of manufacturing thesemiconductor memory device 1 according to the embodiment shares someprocesses of formation of the support pillar HR and the memory pillar MPin common, it is possible to reduce the manufacturing processes and tosuppress the manufacturing costs.

In addition, in the semiconductor memory device 1 according to theembodiment, the plurality of support pillars HR electrically coupled tothe source line SL are electrically coupled to one interconnect IC viathe contacts HRC provided on the respective support pillars HR, and areelectrically coupled to the contact C4 via the interconnect IC. That is,in the electric coupling between the source line SL and the contact C4,the plurality of support pillars HR are coupled in parallel to thecommon interconnect IC. For example, if some processes of formation ofthe support pillar HR and the memory pillar MP are shared, in general,the outer diameter of the support pillar HR is set to be smaller thanthe outer diameter of the contact C4; since the plurality of supportpillars HR used as the contacts for the source line SL are coupled inparallel, the electrical resistance in the current path between thesource line SL and the contact C4 is suppressed. Moreover, byelectrically coupling the conductor layer 40 included in the supportpillar HR to the source line SL via the side surface of the conductorlayer 40, it is possible to ensure the contact area in the Z directionbetween the conductor layer 40 and the source line SL regardless of theouter diameter of the support pillar HR, and to reduce the contactresistance in the contact surface with the source line SL of eachsupport pillar HR.

The plurality of support pillars HR described above are members used aspillars to maintain the three-dimensional configuration when thereplacement process of the stacked interconnects is carried out. Thesemiconductor memory device 1 according to the embodiment uses a part ofthe plurality of support pillars HR as contacts for electricallycoupling the source line drive circuit and the source line SL. That is,the semiconductor memory device 1 according to the embodiment can berealized by the minimum design change, and can suppress the increase inthe area of the memory cell array 10 as well as the manufacturing costs.

[4] Other Modifications

In the above-described embodiment, the memory cell array 10 may haveother configurations. For example, the memory pillar MP may be formed ofa single pillar with no connection, or may be formed of three or morepillars connected in the Z direction. Moreover, the memory pillar MP mayhave a structure in which a pillar corresponding to the select gate lineSGD and a pillar corresponding to the word line WL are connected. Theinside of the slit SLT may be made of various types of insulators. Thenumber of bit lines BL overlapping with each memory pillar MP may bedetermined as appropriate.

FIG. 29 is an example of a cross-sectional structure in a cell CA areaand a contact area C4 tap of a semiconductor memory device according toa first modification of the embodiment, and corresponds to a regionsimilar to the region shown in FIG. 8. As shown in FIG. 29, the memorypillar MP and the support pillars HR each may be in contact with theconductor layer 21 at the bottom.

Specifically, in the embodiment described above, the semiconductor layer31 and the conductor layer 21 are electrically coupled via the sidecontact portion SC1 provided on the side surface of the memory pillarMP; however, the semiconductor layer 31 and the conductor layer 21 maybe electrically coupled via the bottom of the memory pillar MP. In thiscase, a part of each of the tunnel insulation film 32, the insulationfilm 33 and the block insulation film 34 formed at the bottom of thememory pillar MP is removed, and via this portion, the semiconductorlayer 31 and the conductor layer 21 are in contact with each other.

For the support pillars HR, a similar modification can be made. In theembodiment described above, the conductor layers 40 and 21 areelectrically coupled via the side contact portion SC2 provided on theside surface of the support pillar HR; however, the conductor layers 40and 21 may be electrically coupled via the bottom of the support pillarHR. In this case, a part of the insulation film 41 formed at the bottomof the support pillar HR is removed, and via this portion, the conductorlayers 40 and 21 are in contact with each other.

FIG. 30 is an example of a cross-sectional structure in a cell area CAand a contact area C4 tap of a semiconductor memory device 1 accordingto a second modification of the embodiment. As shown in FIG. 30, thesecond modification has a different cross-sectional structure in theregion PR including the contact area C4 described with reference to FIG.7 from the structure of the contact area C4 tap shown in the embodiment.

Specifically, the slit 80 filled with an insulator, for example, isprovided around the contact C4. The slit 80 locally divides theinterconnect layers at least provided with the conductor layers 23 to 25in the region PR including the contact C4 between the slits SLT adjacentin the Y direction. In each of the interconnect layers provided with theconductor layers 23 to 25, the portion surrounded by the slit 80 isprovided with an insulator layer 82. The insulator layer 82 is, forexample, the sacrifice member 66 or 71 that is removed by thereplacement process of the stacked interconnects described in theembodiment, and corresponds to the sacrifice member 66 or 71 remainingin the portion surrounded by the slit 80 by causing the insulator in theslit 80 to function as a stopper at the time of the replacement processof the stacked interconnects. The embodiment is not limited to this, andthe insulator layer 82 may be another insulation member (e.g., oxidefilm) filled in the space obtained by removal of the sacrifice members66 and 71. In the conductor layer 22, the region overlapping with theinsulator layer 27 in the plane view may be replaced with the insulatorlayer 81. Furthermore, the insulation film 51 may be omitted.

As described above, the contact C4 may not directly pass through theconductor layers 22 to 25 as in the embodiment, and may be provided topass through the insulator layers 81 and 82. In the embodiment describedabove, the structure around the contact C4 can be changed asappropriate.

In the manufacturing method described in the embodiment, the supportpillar HR is formed after the memory pillar MP is formed; however, themethod is not limited to this. The memory pillar MP may be formed afterthe support pillar HR is formed. In this case, the memory pillar MP maybe higher than the support pillar HR.

In the embodiment described above, circuits such as the sense amplifiermodule 16 are provided below the memory cell array 10 of thesemiconductor memory device 1; however, the configuration is not limitedto this. For example, the semiconductor memory device 1 may have astructure in which a chip provided with the sense amplifier module 16,etc. and a chip provided with the memory cell array 10 are bonded toeach other.

In the embodiment described above, the word line WL and the select gateline SGS are adjacent while the word line WL and the select gate lineSGD are adjacent; however, the configuration is not limited to this. Forexample, a dummy word line corresponding to a dummy transistor may beprovided between the uppermost word line WL and the select gate lineSGD. Similarly, a dummy word line may be provided between the lowermostword line WL and the select gate line SGS. Furthermore, a conductorlayer at the vicinity of the contact portion of the memory pillars MPconnected in the Z direction may be used as a dummy word line.

In the drawings referred to in the description of the above embodiment,the support pillar HR or the contact C4 has a tapered shape, but theembodiment is not limited to this. For example, the support pillar HR orthe contact C4 may have a reversed tapered shape or a shape having a fatmiddle part. Similarly, the memory pillar MP or the slit SLT may have areversed tapered shape or a shape having a fat middle part. Moreover, inthe embodiment described above, the support pillar HR, the contact C4,and the memory pillar MP each have a circular cross-section;

however, the cross-section thereof may be oval, and may be determined asappropriate.

The term “outer diameter” described in this specification indicates, forexample, the outer diameter of the block insulation film 34 of thememory pillar MP, the outer diameter of the insulation film 41 of thesupport pillar HR, or the outer diameter of the insulation film 51 ofthe contact C4. The outer diameter of one member being larger or smallerthan that of the other member indicates the size relation between theouter diameters in the same layer. In other words, the outer diametersof the first and second members in the same cross section parallel tothe surface of the semiconductor substrate 20 are used for thecomparison of the outer diameters between the first and second members.

The term “height” described in this specification indicates the intervalbetween the surface of the semiconductor substrate 20 and the targetportion in the direction vertical to the surface of the semiconductorsubstrate 20. As a criterion of “height”, a structure other than thesemiconductor substrate 20 may be used. For example, if thesemiconductor memory device 1 has a structure in which the chip providedwith the memory cell array 10 and the chip provided with a peripheralcircuit such as the sense amplifier module 16 are bonded to each other,the source line SL (conductor layer 21) or the like may be used insteadof the semiconductor substrate 20 as a criterion of “height”.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1-20. (canceled)
 21. A semiconductor memory device, comprising: a firstconductor layer provided via a first insulator layer above a substrate;a stacked structure in which a plurality of second conductor layers arestacked above the first conductor layer and spaced apart from each otherin a first direction; a pillar passing through the second conductorlayers along the first direction, and including a first semiconductorlayer electrically coupled to the first conductor layer and a secondinsulator layer provided between the first semiconductor layer and thesecond conductor layers of the stacked structure, intersections of thepillar with the second conductor layers functioning as memory celltransistors; a plurality of insulating members provided in a pluralityof slits each extending in a second direction intersecting the firstdirection in the stacked structure and dividing the stacked structureinto a plurality of regions in a third direction intersecting the firstdirection and the second direction; a plurality of conductive memberspassing through the stacked structure along the first direction in whichtop surfaces thereof differing in height from a top surface of thepillar, each of the conductive members including a third conductor layerpartially in contact with the first conductor layer and a thirdinsulator layer provided between the third conductor layer and thesecond conductor layers of the stacked structure; and an upper contactprovided on the third conductor layer of a first one of the conductivemembers, wherein no upper contact is provided on the third conductorlayer of a second one of the conductive members, the first one and thesecond one of the conductive members both passing through the stackedstructure within a first region among the regions positioned between twoinsulating members adjacent in the third direction among the insulatingmembers, a portion of the stacked structure within the first regionbeing provided between the first one and the second one of theconductive members.
 22. The device of claim 21, wherein the thirdconductor layer contains tungsten.
 23. The device of claim 21, whereinthe third insulator layer contains silicon oxide.
 24. The device ofclaim 21, wherein the top surfaces of the conductive members are higherthan the top surface of the pillar.
 25. The device of claim 21, whereinno upper contact is provided on respective third conductor layers of twoor more conductive members among the conductive members, and the thirdconductor layers of the two or more conductive members are electricallycoupled to each other on a side of lower ends of the third conductorlayers.
 26. The device of claim 25, wherein the two or more conductivemembers are aligned in the second direction.
 27. The device of claim 25,wherein the first conductor layer functions as a source layer and thethird conductor layers of the two or more conductive members areelectrically coupled to each other in a same level as the source layerin the first direction.
 28. The device of claim 21, wherein a pluralityof types of insulators are provided in the slits.
 29. The device ofclaim 28, wherein the plurality of types of insulators in the slitsinclude silicon oxide and silicon nitride formed on a side wall of thesilicon oxide.
 30. The device of claim 21, further comprising a drivecircuit provided below the first conductor layer.
 31. A semiconductormemory device, comprising: a first conductor layer provided via a firstinsulator layer above a substrate; a stacked structure in which aplurality of second conductor layers are stacked above the firstconductor layer and spaced apart from each other in a first direction; apillar passing through the second conductor layers along the firstdirection, and including a first semiconductor layer electricallycoupled to the first conductor layer and a second insulator layerprovided between the first semiconductor layer and the second conductorlayers of the stacked structure, intersections of the pillar with thesecond conductor layers functioning as memory cell transistors; aplurality of conductive members passing through the stacked structurealong the first direction in which top surfaces thereof differing inheight from a top surface of the pillar, each of the conductive membersincluding a third conductor layer partially in contact with the firstconductor layer and a third insulator layer provided between the thirdconductor layer and the second conductor layers of the stackedstructure; and a plurality of upper contacts provided on third conductorlayers of first and second conductive members among the conductivemembers, the first and second conductive members being aligned in asecond direction intersecting the first direction, wherein no uppercontact is provided on third conductor layers of third and fourthconductive members among the conductive members, the third and fourthconductive members being aligned in the second direction, and positionsof the third and fourth conductive members are shifted from positions ofthe first and second conductive members in a third directionintersecting the first direction and the second direction.
 32. Thedevice of claim 31, wherein the third conductor layer contains tungsten.33. The device of claim 31, wherein the third insulator layer containssilicon oxide.
 34. The device of claim 31, wherein the top surfaces ofthe conductive members are higher than the top surface of the pillar.35. The device of claim 31, wherein the third conductor layers of thethird and fourth conductive members are electrically coupled to eachother on a side of lower ends of the third conductor layers.
 36. Thedevice of claim 31, wherein the first conductor layer functions as asource layer and the third conductor layers of the third and fourthconductive members are electrically coupled to each other in a samelevel as the source layer in the first direction.
 37. The device ofclaim 31, further comprising: slits each extending in the seconddirection in the stacked structure and dividing the second conductorlayers of the stacked structure into a plurality of parts in the thirddirection, wherein the first to fourth conductive members are arrangedbetween two slits adjacent in the third direction among the slits. 38.The device of claim 37, wherein a plurality of types of insulators areprovided in the slits.
 39. The device of claim 38, wherein the pluralityof types of insulators in the slits include silicon oxide and siliconnitride formed on a side wall of the silicon oxide.
 40. The device ofclaim 31, further comprising a drive circuit provided below the firstconductor layer.